Optoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00521781" target="_blank" >RIV/68378271:_____/19:00521781 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Optoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO

Original language description

Here we will study the optoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO electrode using otical absorption spectroscopy PDS (photothermal deflection spectroscopy), Fourier Transform Infrared Spectroscopy (FTIR), photoluminescence and electroluminescence spectroscopy. The infrared absorbance spectra confirm low carbon content x up to 0.1 in a-SixC1-x:H for SiH4/CH4 ratio 1:3. The increasing CH4 concentration in the H2/SiH4/CH4 flow rate decreases the growth rate of a-SixC1-x:H, increases x and lattice disorder and broadens the band gap to higher energy in agreement with previous publicationsn

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů