All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Model of carrier multiplication due to impurity impact ionization in boron-doped diamond

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00522082" target="_blank" >RIV/68378271:_____/19:00522082 - isvavai.cz</a>

  • Alternative codes found

    RIV/68407700:21230/19:00331253 RIV/68407700:21460/19:00331253

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Model of carrier multiplication due to impurity impact ionization in boron-doped diamond

  • Original language description

    Boron-doped diamond exhibits a characteristic S-shaped I-V curve at room temperature [1] with two electrical conductivity states, i.e., low and high conductivity, at high electric fields (50 – 250 kV.cm-1) due to the carrier freeze-out and impurity impact ionization avalanche effect. To our knowledge, the carrier multiplication during the change of the conductivity state has not been studied. In this article, we investigate theoretically the effect of acceptor concentration and compensation level on the carrier multiplication coefficient at room temperature to determine the optimal dopants concentration of maximum carrier multiplication. The room temperature hole concentration of boron-doped diamond has been calculated for various acceptor concentration and compensation ratio by solving numerically the charge neutrality equation within the Boltzmann approximation of the Fermi-Dirac statistic.n

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    <a href="/en/project/GA17-05259S" target="_blank" >GA17-05259S: Electronic properties of doped diamond in high electric fields</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./

  • ISBN

    978-80-87294-89-5

  • ISSN

  • e-ISSN

  • Number of pages

    5

  • Pages from-to

    41-45

  • Publisher name

    Tanger Ltd.

  • Place of publication

    Ostrava

  • Event location

    Brno

  • Event date

    Oct 17, 2018

  • Type of event by nationality

    EUR - Evropská akce

  • UT code for WoS article

    000513131900006