Model of carrier multiplication due to impurity impact ionization in boron-doped diamond
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00522082" target="_blank" >RIV/68378271:_____/19:00522082 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/19:00331253 RIV/68407700:21460/19:00331253
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Model of carrier multiplication due to impurity impact ionization in boron-doped diamond
Original language description
Boron-doped diamond exhibits a characteristic S-shaped I-V curve at room temperature [1] with two electrical conductivity states, i.e., low and high conductivity, at high electric fields (50 – 250 kV.cm-1) due to the carrier freeze-out and impurity impact ionization avalanche effect. To our knowledge, the carrier multiplication during the change of the conductivity state has not been studied. In this article, we investigate theoretically the effect of acceptor concentration and compensation level on the carrier multiplication coefficient at room temperature to determine the optimal dopants concentration of maximum carrier multiplication. The room temperature hole concentration of boron-doped diamond has been calculated for various acceptor concentration and compensation ratio by solving numerically the charge neutrality equation within the Boltzmann approximation of the Fermi-Dirac statistic.n
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GA17-05259S" target="_blank" >GA17-05259S: Electronic properties of doped diamond in high electric fields</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./
ISBN
978-80-87294-89-5
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
41-45
Publisher name
Tanger Ltd.
Place of publication
Ostrava
Event location
Brno
Event date
Oct 17, 2018
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
000513131900006