Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond
Result description
With a high affinity to carbon comparable to titanium and an electrically conductive carbide, zirconium has potential to form ohmic contact on boron doped diamond. In this work, formation of ohmic contacts on boron doped diamond using zirconium is studied in comparison to titanium. Boron doped diamond epitaxial layers have been grown by microwave plasma enhanced chemical vapour deposition with various B/C ratio. Circular Transmission Line Model structures were fabricated using standard micro-fabrication technologies. Specific contact resistance of fabricated contacts was determined for different boron concentrations and for various annealing temperatures. Ohmic contacts using zirconium are formed after annealing at 400 °C. Specific contact resistance steadily decreases with high temperature annealing down to a value of ca. 1 mΩ.cm2 after annealing at 700 °C for highly boron doped diamond. In comparison, titanium contact fabricated on highly doped diamond appears not stable under high temperature annealing.
Keywords
The result's identifiers
Result code in IS VaVaI
Alternative codes found
RIV/68378271:_____/18:00501101 RIV/61388955:_____/18:00501101
Result on the web
DOI - Digital Object Identifier
Alternative languages
Result language
angličtina
Original language name
Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond
Original language description
With a high affinity to carbon comparable to titanium and an electrically conductive carbide, zirconium has potential to form ohmic contact on boron doped diamond. In this work, formation of ohmic contacts on boron doped diamond using zirconium is studied in comparison to titanium. Boron doped diamond epitaxial layers have been grown by microwave plasma enhanced chemical vapour deposition with various B/C ratio. Circular Transmission Line Model structures were fabricated using standard micro-fabrication technologies. Specific contact resistance of fabricated contacts was determined for different boron concentrations and for various annealing temperatures. Ohmic contacts using zirconium are formed after annealing at 400 °C. Specific contact resistance steadily decreases with high temperature annealing down to a value of ca. 1 mΩ.cm2 after annealing at 700 °C for highly boron doped diamond. In comparison, titanium contact fabricated on highly doped diamond appears not stable under high temperature annealing.
Czech name
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Czech description
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Classification
Type
Jost - Miscellaneous article in a specialist periodical
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
MRS Advances
ISSN
2059-8521
e-ISSN
2059-8521
Volume of the periodical
3
Issue of the periodical within the volume
33
Country of publishing house
GB - UNITED KINGDOM
Number of pages
5
Pages from-to
1931-1935
UT code for WoS article
000438845800010
EID of the result in the Scopus database
2-s2.0-85049554543
Basic information
Result type
Jost - Miscellaneous article in a specialist periodical
OECD FORD
Condensed matter physics (including formerly solid state physics, supercond.)
Year of implementation
2018