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Effect of a-Si on CH3NH3PbI3 films and applications in perovskite solar cells

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00540605" target="_blank" >RIV/68378271:_____/19:00540605 - isvavai.cz</a>

  • Alternative codes found

    RIV/68407700:21230/19:00340505 RIV/00216208:11320/19:10412841

  • Result on the web

    <a href="http://dx.doi.org/10.1109/PVSC40753.2019.8980569" target="_blank" >http://dx.doi.org/10.1109/PVSC40753.2019.8980569</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1109/PVSC40753.2019.8980569" target="_blank" >10.1109/PVSC40753.2019.8980569</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Effect of a-Si on CH3NH3PbI3 films and applications in perovskite solar cells

  • Original language description

    The effect of PECVD deposition of amorphous Silicon on perovskite layers, and perovskite layers prepared on pre-deposited a-Si are investigated in the interest of determining the interaction between the two materials and developing a-Si as a material for direct integration into perovskite cells. This may include as selective contacts or carrier transport layers, an encapsulation material, or in other ways. Doped and intrinsic a-Si layers are deposited at a range of temperatures, with the resulting structures characterized by methods including photoluminescence, SEM imaging, absorption, resistivity measurements, and degradation rate. Comparisons are made to layers deposited on glass without any PECVD deposition carried out and layers subjected to heating without PECVD deposition. The implications for use of a-Si in perovskite cells are explored.n

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    <a href="/en/project/EF15_003%2F0000464" target="_blank" >EF15_003/0000464: Centre of Advanced Photovoltaics</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)

  • ISBN

    978-1-7281-0494-2

  • ISSN

    0160-8371

  • e-ISSN

  • Number of pages

    5

  • Pages from-to

    (2019)

  • Publisher name

    IEEE

  • Place of publication

    New York

  • Event location

    Chicago

  • Event date

    Jun 16, 2019

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000542034900096