Effect of a-Si on CH3NH3PbI3 films and applications in perovskite solar cells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00540605" target="_blank" >RIV/68378271:_____/19:00540605 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/19:00340505 RIV/00216208:11320/19:10412841
Result on the web
<a href="http://dx.doi.org/10.1109/PVSC40753.2019.8980569" target="_blank" >http://dx.doi.org/10.1109/PVSC40753.2019.8980569</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/PVSC40753.2019.8980569" target="_blank" >10.1109/PVSC40753.2019.8980569</a>
Alternative languages
Result language
angličtina
Original language name
Effect of a-Si on CH3NH3PbI3 films and applications in perovskite solar cells
Original language description
The effect of PECVD deposition of amorphous Silicon on perovskite layers, and perovskite layers prepared on pre-deposited a-Si are investigated in the interest of determining the interaction between the two materials and developing a-Si as a material for direct integration into perovskite cells. This may include as selective contacts or carrier transport layers, an encapsulation material, or in other ways. Doped and intrinsic a-Si layers are deposited at a range of temperatures, with the resulting structures characterized by methods including photoluminescence, SEM imaging, absorption, resistivity measurements, and degradation rate. Comparisons are made to layers deposited on glass without any PECVD deposition carried out and layers subjected to heating without PECVD deposition. The implications for use of a-Si in perovskite cells are explored.n
Czech name
—
Czech description
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Classification
Type
D - Article in proceedings
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/EF15_003%2F0000464" target="_blank" >EF15_003/0000464: Centre of Advanced Photovoltaics</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
ISBN
978-1-7281-0494-2
ISSN
0160-8371
e-ISSN
—
Number of pages
5
Pages from-to
(2019)
Publisher name
IEEE
Place of publication
New York
Event location
Chicago
Event date
Jun 16, 2019
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000542034900096