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Properties of yellow band in GaN layers

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00537999" target="_blank" >RIV/68378271:_____/20:00537999 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Properties of yellow band in GaN layers

  • Original language description

    Luminescence properties of n-doped GaN layer, grown with specific growth condition to obtain high carbon concentration in layer, were studied. Room temperature PL spectrum showed very strong YB intensity and suppressed GaN excitonic band. Properties of YB were studied by low temperature PL measurement and decay time measurement. Shape of the YB was analysed with one-dimensional configuration coordinate model and it was shown that the YB properties are similar to properties of YB caused by carbon-related defect (CN). Our PL results are in a good agreement with SIMS analysis, where higher carbon concentration was detected. Decay time of YB is in the hundreds of microseconds. This value corresponds to published results of other groups. Low temperature PL measurement is a good tool for investigation the source of YB in different MOVPE grown GaN layers. Understanding of the origin of YB can help technologists to improve the growth process and eliminate YB source.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    <a href="/en/project/LO1603" target="_blank" >LO1603: Centre of Technology and Advanced Structure Analysis of Materials with Application Impact</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2020

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    20th Conference of Czech and Slovak Physicists Proceedings

  • ISBN

    978-80-89855-13-1

  • ISSN

  • e-ISSN

  • Number of pages

    2

  • Pages from-to

    149-150

  • Publisher name

    Slovak Physical Society, Czech Physical Society

  • Place of publication

    Košice

  • Event location

    Prague

  • Event date

    Sep 7, 2020

  • Type of event by nationality

    EUR - Evropská akce

  • UT code for WoS article