Growth of carbon allotropes in plasma CVD system

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00559036" target="_blank" >RIV/68378271:_____/22:00559036 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Growth of carbon allotropes in plasma CVD system
Original language description
Various carbon (nano-) forms, so-called allotropes, have become one of the most supporting activities in fundamental and applied research trends. Therefore, a universal deposition process capable of “adjusting” system parameters in one “deposition chamber” is highly demanding. Here, we present a low-pressure large area deposition system combining radiofrequency (RF) and microwave (MW) plasma in one chamber in different configurations, which offers a wide deposition window for the growth of sp2 carbon (carbon nanotubes, amorphous carbon), a mixture of sp2 and sp3 (diamond-like films) and pure sp3 carbon represented by diamond films. We will show that not only the type of plasma source (RF vs. MW) but also the gas mixture and plasma chemistry are crucial parameters for the controllable and reproducible growth of these allotropes at temperatures from 250 to 800 °C.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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