Improvement of endurance and switching speed in Hf1-xZrxO2 thin films using a nanolaminate structure

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00568238" target="_blank" >RIV/68378271:_____/22:00568238 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1088/1361-6528/ac79bb" target="_blank" >https://doi.org/10.1088/1361-6528/ac79bb</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-6528/ac79bb" target="_blank" >10.1088/1361-6528/ac79bb</a>

Result language
angličtina
Original language name
Improvement of endurance and switching speed in Hf1-xZrxO2 thin films using a nanolaminate structure
Original language description
To improve the endurance and polarization switching speed of Hf1−xZrxO2 (HZO) ferroelectric films, we designed a 10 nm Hf0.5Zr0.5O2+ZrO2 (HZZ) nanolaminate structure. Three films with different ZrO2 interlayers thicknesses were compared to find the optimal condition to implement the effect of the topological domain wall which was proposed recently. The HZZ film were deposited by repeatedly stacking ten HZO (∼0.92 nm) and six ZrO2 (∼0.53 nm) layers, they exhibited a dramatic reduction of coercive field without an effective loss of remnant polarization. The endurance at operation voltage increased by more than 100 times compared with that of the solid solution HZO film, and the switching speed was increased by more than two times.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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