Enhanced growth rate of diamond films at low temperature in focused microwave plasma system

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00570793" target="_blank" >RIV/68378271:_____/23:00570793 - isvavai.cz</a>
Result on the web
<a href="https://www.confer.cz/nanocon/2022/4587-enhanced-growth-rate-of-diamond-films-at-low-temperature-in-focused-microwave-plasma-system" target="_blank" >https://www.confer.cz/nanocon/2022/4587-enhanced-growth-rate-of-diamond-films-at-low-temperature-in-focused-microwave-plasma-system</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.37904/nanocon.2022.4587" target="_blank" >10.37904/nanocon.2022.4587</a>

Result language
angličtina
Original language name
Enhanced growth rate of diamond films at low temperature in focused microwave plasma system
Original language description
The low temperature (< 500 °C) diamond film deposition on fused silica in two different focused microwave plasma systems, i.e. a multimode clamshell cavity (MCC) and a rotational ellipsoid cavity (REC) reactor, was investigated. During the experiments, the methane to hydrogen ratio, in the hydrogen-rich process gas mixture, varied from 1 % to 15 % for MCC and from 1 % to 9 % for REC. The grown films were analyzed by scanning electron microscopy and Raman shift measurements. The outcomes of the study and enhanced diamond growth at low temperatures is advantageous for overcoating of fused silica as well as thermally sensitive substrates, e.g. optical elements, photonic crystals, sensors, etc.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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