Single-shot selective femtosecond and picosecond infrared laser crystallization of an amorphous Ge/Si multilayer stack

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00571614" target="_blank" >RIV/68378271:_____/23:00571614 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21340/23:00367013

Result on the web

<a href="https://doi.org/10.1016/j.optlastec.2023.109161" target="_blank" >https://doi.org/10.1016/j.optlastec.2023.109161</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.optlastec.2023.109161" target="_blank" >10.1016/j.optlastec.2023.109161</a>

Result language

angličtina

Original language name

Single-shot selective femtosecond and picosecond infrared laser crystallization of an amorphous Ge/Si multilayer stack

Original language description

Pulsed laser crystallization is an efficient annealing technique to obtain polycrystalline silicon or germanium films on non-refractory substrates. This is important for creating “flexible electronics” and can also be used to fabricate thin-film solar cells. In this work, near- and mid-infrared femtosecond and picosecond laser pulses were used to crystallize a Ge/Si multilayer stack consisting of alternating amorphous thin films of silicon and germanium. The use of infrared radiation at wavelengths of 1030 and 1500 nm with photon energies lower than the optical absorption edge in amorphous silicon allowed obtaining selective crystallization of germanium layers with a single laser shot. The phase composition of the irradiated stack was investigated by the Raman scattering technique. Several non-ablative regimes of ultrashort-pulse laser crystallization were found, from partial crystallization of germanium without intermixing the Ge/Si layers to complete intermixing of the layers with formation of GexSi1-x solid alloys. The roles of single- and two-photon absorption, thermal and non-thermal (ultrafast) melting processes, and laser-induced stresses in selective pico- and femtosecond laser annealing are discussed. It is concluded that, due to a mismatch of the thermal expansion coefficients between the adjacent stack layers, efficient explosive solid-phase crystallization of the Ge layers is possible at relatively low temper atures, well below the melting point.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10306 - Optics (including laser optics and quantum optics)

Project

<a href="/en/project/EF15_003%2F0000445" target="_blank" >EF15_003/0000445: Advanced designing of functional materials: From mono- to BI- And TRI-chromatic excitation with tailored laser pulses</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2023

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Optics and Laser Technology

ISSN

0030-3992

e-ISSN

1879-2545

Volume of the periodical

161

Issue of the periodical within the volume

June

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

10

Pages from-to

109161

UT code for WoS article

000960852700001

EID of the result in the Scopus database

2-s2.0-85146431519