Development of Nb-GaAs based superconductor-semiconductor hybrid platform by combining in situ dc magnetron sputtering and molecular beam epitaxy
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00575229" target="_blank" >RIV/68378271:_____/23:00575229 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1103/PhysRevMaterials.7.076201" target="_blank" >https://doi.org/10.1103/PhysRevMaterials.7.076201</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevMaterials.7.076201" target="_blank" >10.1103/PhysRevMaterials.7.076201</a>
Alternative languages
Result language
angličtina
Original language name
Development of Nb-GaAs based superconductor-semiconductor hybrid platform by combining in situ dc magnetron sputtering and molecular beam epitaxy
Original language description
We present Nb thin films deposited in situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultrahigh vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in situ and ex situ deposition which we relate to differences in magnetron sputtering conditions and chamber geometry. The Nb films have critical temperatures of around 9 K and critical perpendicular magnetic fields of up to Bc2 = 1.4 T at 4.2 K. From STEM images of the GaAs-Nb interface we find the formation of an amorphous interlayer between the GaAs and the Nb for both the ex situ and in situ deposited material.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review Materials
ISSN
2475-9953
e-ISSN
2475-9953
Volume of the periodical
7
Issue of the periodical within the volume
7
Country of publishing house
US - UNITED STATES
Number of pages
12
Pages from-to
076201
UT code for WoS article
001051430700001
EID of the result in the Scopus database
2-s2.0-85166979919