Etching of polycrystalline diamond films via thermochemical process

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00599701" target="_blank" >RIV/68378271:_____/23:00599701 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Etching of polycrystalline diamond films via thermochemical process
Original language description
This study presents a novel approach to achieve controlled deep etching of diamond using nickel (Ni) as the catalyst in a thermochemical process conducted at different gas compositions and temperatures to 950 °C. Only minimal etching was observed under a Ni mask when the diamond was treated in hydrogen plasma. Introducing CO2 to the gas mixture enhanced the etching by 2-3 times. Unfortunately, the etching was also observed over the entire film area, including unmasked regions. Conversely, the use of water vapor demonstrated excellent etching selectivity, where the unmasked diamond area remained unaffected. This etching process was strongly pressure-dependent. In the low-pressure range (5 ÷ 50 Torr), catalytic etching achieved a maximum depth of 2-3 µm before slowing down due to the formation of a graphitized cap layer on the top surface, which limited the access of -OH to the diamond-Ni interface.
Czech name
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Czech description
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Project
<a href="/en/project/LUASK22147" target="_blank" >LUASK22147: Growth and Radiation Mechanisms in Diamond Hybrid Detectors</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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