Thick crack-free {113} epitaxial boron-doped diamond layers for power electronics—Deposition with nitrogen addition and high microwave power
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00585191" target="_blank" >RIV/68378271:_____/24:00585191 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1063/5.0200233" target="_blank" >https://doi.org/10.1063/5.0200233</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/5.0200233" target="_blank" >10.1063/5.0200233</a>
Alternative languages
Result language
angličtina
Original language name
Thick crack-free {113} epitaxial boron-doped diamond layers for power electronics—Deposition with nitrogen addition and high microwave power
Original language description
Here, we investigate the effect of N2 addition in MWPECVD on the growth of thick {113} epitaxial diamond layers. We identify a narrow range of N2 concentrations for the growth of crack-free thick layers with a smooth surface morphology. Without N2, cracks start to appear after a layer thickness of 7–10 μm due to elastic energy stored in the layer, but the addition of N2 stabilizes growth. We also investigate the use of low MW power density growth conditions to produce thick B-doped layers, where we observe a very high B incorporation efficiency. Finally, we demonstrate the fabrication of a thick (>200 μm) {113} p+ monocrystal. The concentration of B has been investigated by Hall effect, Raman, and SIMS. The growth of high quality thick {113} epitaxial layer with high B concentration (>1020 cm−3) and low resistivity and the fabrication of freestanding p+ substrates are necessary steps for vertical electronic devices such as high power Schottky diodes.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics Letters
ISSN
0003-6951
e-ISSN
1077-3118
Volume of the periodical
124
Issue of the periodical within the volume
16
Country of publishing house
US - UNITED STATES
Number of pages
16
Pages from-to
161904
UT code for WoS article
001202667700025
EID of the result in the Scopus database
2-s2.0-85190780052