Plasma electron characterization in electron chemical vapor deposition
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00599249" target="_blank" >RIV/68378271:_____/24:00599249 - isvavai.cz</a>
Result on the web
<a href="https://hdl.handle.net/11104/0356800" target="_blank" >https://hdl.handle.net/11104/0356800</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1116/6.0003408" target="_blank" >10.1116/6.0003408</a>
Alternative languages
Result language
angličtina
Original language name
Plasma electron characterization in electron chemical vapor deposition
Original language description
Recently, a novel approach of depositing metallic films with chemical vapor deposition (CVD), using plasma electrons as reducing agents, has been presented and is herein referred to as e-CVD. By applying a positive substrate bias to the substrate holder, plasma electrons are drawn to the surface of the substrate, where the film growth occurs. In this work, we have characterized the electron flux at the substrate position in terms of energy and number density as well as the plasma potential and floating potential when maintaining an unbiased and a positively biased substrate. The measurements were performed using a modified radio frequency Sobolewski probe to overcome issues due to the coating of conventional electrostatic probes. The plasma was generated using a DC hollow cathode plasma discharge at various discharge powers and operated with and without precursor gas. With a precursor, an increase in the substrate bias shows a trend of increasing electron density. The electron temperature does not change much without precursor gas and is found in the range of 0.3–1.1 eV. Introducing a precursor gas to the vacuum chamber shows an increase in the electron temperature to a range of 1–5 eV and with a trend of decreasing electron temperature as a function of discharge power. From the values of the plasma potential and the substrate bias potential, we were able to calculate the potential difference between the plasma and the substrate, giving us insight into what charge carriers are expected at the substrate under different process conditions.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Vacuum Science & Technology A : Vacuum, Surfaces and Films
ISSN
0734-2101
e-ISSN
1520-8559
Volume of the periodical
42
Issue of the periodical within the volume
2
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
023006
UT code for WoS article
001173755300004
EID of the result in the Scopus database
2-s2.0-85186108785