Universal formation mechanism of halide perovskite thin films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00604141" target="_blank" >RIV/68378271:_____/24:00604141 - isvavai.cz</a>

Result on the web

<a href="https://www.nanoge.org/proceedings/HOPV24/65c52531a1f2da7226919356" target="_blank" >https://www.nanoge.org/proceedings/HOPV24/65c52531a1f2da7226919356</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Universal formation mechanism of halide perovskite thin films

Original language description

Metal halide perovskites (MHPs) have gained significant scientific interest due to their outstanding optoelectronic properties and high efficiencies in solar cell photoconversion. A deeper understanding of the formation mechanism of MPHs thin films gives us a unique opportunity to enhance its optoelectronic quality. We divided the MHPs film formation into three stages. We see fast growth of MHPs grains from GIWAXS in the first growth stage, accompanied by a proportional increase in PL signal. However, in the second stage, the growth speed significantly decreases, and the PL signal is highly quenched. This observation means that the free-grown grains (stage I) are of low defect densities, but once they start to connect (stage II) the grain boundaries are formed, where defects are concentrated. This leads to a rapid decrease in the PL signal. The last stage documents partial degradation at long deposition times only.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2024

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů