Optical and electrical properties of low-high boron-doped {115}-oriented epitaxial diamond layers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00605164" target="_blank" >RIV/68378271:_____/25:00605164 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21460/25:00390804
Result on the web
<a href="https://doi.org/10.1016/j.diamond.2024.111871" target="_blank" >https://doi.org/10.1016/j.diamond.2024.111871</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.diamond.2024.111871" target="_blank" >10.1016/j.diamond.2024.111871</a>

Result language
angličtina
Original language name
Optical and electrical properties of low-high boron-doped {115}-oriented epitaxial diamond layers
Original language description
This study delves into investigation of the growth, electrical, and optical properties of epitaxial boron-doped diamond oriented on the {115} crystallographic plane, with varying boron concentrations. Epitaxial diamond layers with boron concentration between 1017 and 1020 cm-3, as determined by Raman spectroscopy and secondary ion mass spectroscopy, were obtained. Resistivity varies significantly with the boron concentration. The resistivity was controlled between 313 and 4.37 Ω.cm by changing the B/C ratio from 0 to 250 ppm.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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