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Metallic and semiconductor nanoparticles integrated into thin layers of hydrogenated amorphous silicon or silicon carbide

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00619271" target="_blank" >RIV/68378271:_____/25:00619271 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.37904/nanocon.2024.4995" target="_blank" >http://dx.doi.org/10.37904/nanocon.2024.4995</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.37904/nanocon.2024.4995" target="_blank" >10.37904/nanocon.2024.4995</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Metallic and semiconductor nanoparticles integrated into thin layers of hydrogenated amorphous silicon or silicon carbide

  • Original language description

    The combination of PECVD - plasma enhanced chemical vapor deposition and VE - vacuum evaporation at one vacuum chamber is in situ method how to integrate semiconductor (Ge) and metallic (Sn) nanoparticles into amorphous hydrogenated thin films and their structures on the base of a-Si:H or a-SiC:H. In this work we focus our effort to deposit a-SiC:H thin films from monomethylsilane (MMS = SiH3-CH3) diluted by hydrogen in the ratio 2/100 sccm. The Ge evaporates at vacuum higher than 2E-5 Pa. The TEM - transmission electron microscopy and AFM - atomic force microscopy are used for microscopical characterization of thin films while PDS - photothermal deflection spectroscopy and PL – photoluminescence spectroscopy are used for their spectroscopical characterization.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2025

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    NANOCON 2024 - Conference Proceedings

  • ISBN

    978-80-88365-24-2

  • ISSN

    2694-930X

  • e-ISSN

  • Number of pages

    6

  • Pages from-to

    53-58

  • Publisher name

    Tanger Ltd.

  • Place of publication

    Ostrava

  • Event location

    Brno

  • Event date

    Oct 16, 2024

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article