Thin hydrogenated amorphous Silicon carbide layers with embedded Ge nanocrystals

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00617306" target="_blank" >RIV/68378271:_____/25:00617306 - isvavai.cz</a>
Result on the web
<a href="https://hdl.handle.net/11104/0364248" target="_blank" >https://hdl.handle.net/11104/0364248</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/nano15030176" target="_blank" >10.3390/nano15030176</a>

Result language
angličtina
Original language name
Thin hydrogenated amorphous Silicon carbide layers with embedded Ge nanocrystals
Original language description
The in situ combination of PECVD and vacuum evaporation in the same vacuum chamber allowed us to integrate Ge NCs into a-SiC:H thin films deposited from monomethyl silane diluted with hydrogen. The presence of Ge NCs embedded in the a-Si:C:H thin films was confirmed by TEM and EDX. The embedded GeNCs increased optical absorption in the NIR spectral region. The quenching of a-SiC:H NIR PL due to the presence of Ge indicates that the diffusion length of free charge carriers in a-SiC:H is in the range of a few tens of nm, an order of magnitude less than in a-Si:H. The optical properties of a-SiC:H films were degraded after vacuum annealing at 550C.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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