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Application of ECWR for tin removal with prospective use in tokamaks with liquid metal divertor

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00635859" target="_blank" >RIV/68378271:_____/25:00635859 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216208:11320/25:10501548

  • Result on the web

    <a href="https://hdl.handle.net/11104/0369068" target="_blank" >https://hdl.handle.net/11104/0369068</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1088/1361-6587/add08c" target="_blank" >10.1088/1361-6587/add08c</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Application of ECWR for tin removal with prospective use in tokamaks with liquid metal divertor

  • Original language description

    One of the problems of the liquid metal tokamak divertor technology is the redeposition of the released metal on the tokamak vessel walls. In this work an investigation of the removal of the redeposited metals from grounded conducting walls of tokamak was done by a low-temperature Ar plasma generated by electron cyclotron waves, radiofrequency electron cyclotron wave resonance (RF-ECWR), at 13.56 MHz in a new/modified system with a tunable plasma potential. The plasma potential was controlled in this system in the range from 0-270 V. The plasma potential control was achieved by adding an additional DC voltage supply on ECWR electrode via a suitable inductor having high impedance at the 13.56 MHz frequency. Metallic Sn thin films were deposited in the first step on the conducting doped Si wafer by means of medium frequency pulsed magnetron sputtering from pure Sn target. In the next step, the Sn films were removed from the Si substrate by ion etching (ion sputtering) by accelerated Ar ion fluxes. The etching efficiency was investigated in dependence on different values of the applied RF power and different values of the adjusted plasma potential. The ion density, electron temperature and the ion flux density impinging on the sample were determined by an RF probe system at different ECWR plasma conditions. The etching efficiency of Sn coatings was evaluated by profilometry measurement, SEM photography and electron microprobe analysis. It was found that this new/modified configuration of the ECWR plasma source can prospectively be used for cleaning of the grounded walls of tokamak from deposited Sn layers.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10305 - Fluids and plasma physics (including surface physics)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2025

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Plasma Physics and Controlled Fusion

  • ISSN

    0741-3335

  • e-ISSN

    1361-6587

  • Volume of the periodical

    67

  • Issue of the periodical within the volume

    5

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    8

  • Pages from-to

    055035

  • UT code for WoS article

    001482534800001

  • EID of the result in the Scopus database

    2-s2.0-105005153957