Femtosecond laser crystallization of ultrathin a-Ge films in multilayer stacks with silicon layers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00640161" target="_blank" >RIV/68378271:_____/25:00640161 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/25:00386373
Result on the web
<a href="https://hdl.handle.net/11104/0370584" target="_blank" >https://hdl.handle.net/11104/0370584</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/app152011082" target="_blank" >10.3390/app152011082</a>
Alternative languages
Result language
angličtina
Original language name
Femtosecond laser crystallization of ultrathin a-Ge films in multilayer stacks with silicon layers
Original language description
Ultrashort pulsed laser annealing is an efficient technique for crystallizing amorphous semiconductors with the possibility to obtain polycrystalline films at low temperatures, below the melting point, through non-thermal processes. Here, a multilayer structure consisting of alternating amorphous silicon and germanium films was annealed by mid-infrared (1500 nm) ultrashort (70 fs) laser pulses under single-shot and multi-shot irradiation conditions. We investigate selective crystallization of ultrathin (3.5 nm) a-Ge non-hydrogenated films, which are promising for the generation of highly photostable nanodots. Based on Raman spectroscopy analysis, we demonstrate that, in contrast to thicker (above 10 nm) Ge films, explosive stress-induced crystallization is suppressed in such ultrathin systems and proceeds via thermal melting. This is likely due to the islet structure of ultrathin films, which results in the formation of nanopores at the Si-Ge interface and reduces stress confinement during ultrashort laser heating.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
21001 - Nano-materials (production and properties)
Result continuities
Project
<a href="/en/project/EH22_008%2F0004596" target="_blank" >EH22_008/0004596: Sensors and Detectors for Future Information Society</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Sciences-Basel
ISSN
2076-3417
e-ISSN
2076-3417
Volume of the periodical
15
Issue of the periodical within the volume
20
Country of publishing house
CH - SWITZERLAND
Number of pages
12
Pages from-to
11082
UT code for WoS article
001602625200001
EID of the result in the Scopus database
2-s2.0-105020242522