Mn-doping reveals a thermal gap and natural p-type conductivity in Bi2O2Se
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00640272" target="_blank" >RIV/68378271:_____/25:00640272 - isvavai.cz</a>
Alternative codes found
RIV/00216224:14310/25:00143302 RIV/00216208:11320/25:10506244
Result on the web
<a href="https://hdl.handle.net/11104/0371786" target="_blank" >https://hdl.handle.net/11104/0371786</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/d5ma00543d" target="_blank" >10.1039/d5ma00543d</a>
Alternative languages
Result language
angličtina
Original language name
Mn-doping reveals a thermal gap and natural p-type conductivity in Bi2O2Se
Original language description
Bi2O2Se is a semiconductor that is being intensively studied due to its many extraordinary properties. Since about 2010, research on polycrystals has focused on thermoelectric materials. For the last 10 years, single crystal research has been driven by its quasi 2D structure with unexpectedly high permittivity (εr ≈ 500), which promotes high electron mobility. Bi2O2Se thus outperforms other 2D materials in many parameters. However, the high permittivity is also responsible for the extremely low critical concentration of the metal–insulator transition (n ≈ 1015 cm-3). Thus, Bi2O2Se is so far only available as an n-type semiconductor largely with metal-like properties, although the electron concentration can range over 6 orders of magnitude (n ≈ 1015–1021 cm-3), reportedly due to the very high concentration of selenium vacancies or selenium antisites on the Bi site.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GA22-05919S" target="_blank" >GA22-05919S: Transition metal doped Bi2O2Se layered semiconductors: correlation of transport, magnetic and thermoelectric properties</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Materials Advances
ISSN
2633-5409
e-ISSN
2633-5409
Volume of the periodical
6
Issue of the periodical within the volume
20
Country of publishing house
GB - UNITED KINGDOM
Number of pages
9
Pages from-to
7526-7534
UT code for WoS article
001576315100001
EID of the result in the Scopus database
2-s2.0-105018726606