Transport of Impurities in Multi-Layered a-Si/pc-Si Thin Films after Pulsed Laser Irradiation

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21110%2F02%3A01073602" target="_blank" >RIV/68407700:21110/02:01073602 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Transport of Impurities in Multi-Layered a-Si/pc-Si Thin Films after Pulsed Laser Irradiation

Original language description

In this paper, a model for calculating the redistribution of foreign atoms during the described process is formulated. From the mathematical point of view, the process can be generally classified as a four-phasae problem with three moving boundaries

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JJ - Other materials

OECD FORD branch

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Project

<a href="/en/project/ME%20370" target="_blank" >ME 370: Impurity concentration and its influence on the laser crystallization of amorphous silicon</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings of Workshop 2002

ISBN

80-01-02511-X

ISSN

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e-ISSN

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Number of pages

2

Pages from-to

542-543

Publisher name

ČVUT

Place of publication

Praha

Event location

Praha

Event date

Feb 11, 2002

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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