Optimizing stability of wet chemistry oxide passivation of Si (111) and Si (100)

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00599689" target="_blank" >RIV/68378271:_____/24:00599689 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/24:00368205
Result on the web
<a href="https://hdl.handle.net/11104/0357134" target="_blank" >https://hdl.handle.net/11104/0357134</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.59957/jctm.v59.i2.2024.15" target="_blank" >10.59957/jctm.v59.i2.2024.15</a>

Result language
angličtina
Original language name
Optimizing stability of wet chemistry oxide passivation of Si (111) and Si (100)
Original language description
Numerous parameters are regulated in the wet chemical oxidation process for TOPCon/POLO solar cell technology to improve silicon oxide passivation (SiO2). Understanding the electronic properties, particularly the lifetime of the carriers and their thickness, requires knowledge of the properties of the surface of crystalline silicon (c-Si), which is subjected to native oxide etching, followed by wet chemical oxidation, such as nitric acid or hot water oxidation and various hydrogenation methods. The results of these processes are tracked with lifetime measurement equipment, and spectral ellipsometry is used to measure the thickness of the oxide layer by using the single-sided polished wafers with surface orientation (1 1 1).
Czech name
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Czech description
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Type
J<sub>SC</sub> - Article in a specialist periodical, which is included in the SCOPUS database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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