Optimizing stability of wet chemistry oxide passivation of Si (111) and Si (100)

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F24%3A00368205" target="_blank" >RIV/68407700:21230/24:00368205 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/24:00599689

Result on the web

<a href="https://doi.org/10.59957/jctm.v59.i2.2024.15" target="_blank" >https://doi.org/10.59957/jctm.v59.i2.2024.15</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.59957/jctm.v59.i2.2024.15" target="_blank" >10.59957/jctm.v59.i2.2024.15</a>

Result language

angličtina

Original language name

Optimizing stability of wet chemistry oxide passivation of Si (111) and Si (100)

Original language description

Numerous parameters are regulated in the wet chemical oxidation process for TOPCon/POLO solar cell technology to improve silicon oxide passivation (SiO2). Understanding the electronic properties, particularly the lifetime of the carriers and their thickness, requires knowledge of the properties of the surface of crystalline silicon (c-Si), which is subjected to native oxide etching followed by wet chemical oxidation, such as nitric acid or hot water oxidation and various hydrogenation methods. This is tracked with lifetime measurement equipment, and spectral ellipsometry is used to measure the thickness of the oxide layer by using the single sided polished wafers with surface orientation (1 1 1). In addition to the actual values, their time stability is also tracked. Before the hydrogenation step was introduced, the lifetime of the samples was in the order of approximately 0.001 ms, which is less than the bulk lifetime. With the hydrogenation , lifetime increased by more than order of magnitude for relatively long time with no difference between (1 1 1) and (1 0 0) wafers indicating that hydrogenation of the Si/SiO2 interface is performed.

Czech name

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Czech description

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Type

J_SC - Article in a specialist periodical, which is included in the SCOPUS database

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

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Continuities

S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2024

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Chemical Technology and Metallurgy

ISSN

1314-7471

e-ISSN

1314-7978

Volume of the periodical

59

Issue of the periodical within the volume

2

Country of publishing house

BG - BULGARIA

Number of pages

6

Pages from-to

361-366

UT code for WoS article

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EID of the result in the Scopus database

2-s2.0-85186560120