Study of technological and radiation defects in silicon
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F10%3A00177086" target="_blank" >RIV/68407700:21220/10:00177086 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21670/10:00177086
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Study of technological and radiation defects in silicon
Original language description
In this work we have examined the process of defect annealing of neutron transmutation phosphorus-doped n-type silicone (NTD) detector irradiated by neutrons. Radiation defects produced during irradiation of float zone silicon were characterized by meansof DLTS. Band gap position, capture cross section of detected levels appearing during irradiation have been measured in order to identify the radiation centers. Obtained experimental results will be further utilized for optimization of the techniques and methods used in the production of silicon power devices, i.e. to the development of studies and experiments aimed on increasing the radiation hardness of silicon detectors used in nuclear accelerators.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BF - Elementary particle theory and high energy physics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Silicon 2010
ISBN
978-80-254-7361-0
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
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Publisher name
TECON-Scientific
Place of publication
Rožnov pod Radhoštěm
Event location
ROZNOV POD RADHOSTEM
Event date
Nov 2, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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