Dielectric absorption correlated to ferromagnetic behavior in (Cr, Ni)-codoped 4H-SiC for microwave applications

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F22%3A00352777" target="_blank" >RIV/68407700:21220/22:00352777 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.molstruc.2021.131462" target="_blank" >https://doi.org/10.1016/j.molstruc.2021.131462</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.molstruc.2021.131462" target="_blank" >10.1016/j.molstruc.2021.131462</a>

Result language
angličtina
Original language name
Dielectric absorption correlated to ferromagnetic behavior in (Cr, Ni)-codoped 4H-SiC for microwave applications
Original language description
For (Cr, Ni)-codoped 4 H silicon carbide SiC, electronic/optical properties are calculated, and a ferromag-netic (FM) order is detected. Doping Ni at Si sites should not destroy the effective coupling of the spins induced by Cr, could enormously boost the quality of absorbing electromagnetic waves, and acts as resist coatings for Cr-doped 4 H-SiC. The metallic character shown by (Ni, Cr)-codoped 4H-SiC allow us using it in microwave circuits. Its FM order is mainly due to Cr impurities, so that the strong FM coupling orig-inates from p-d hybridization interaction. Our results show that substituting Al for Ni either in (Al, Cr) or (Al, Cr)-doped 4H-SiC may improve the magnetism of 4H-SiCand enhance its microwave absorbing properties in the mm-wave band.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10306 - Optics (including laser optics and quantum optics)

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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