Radiation defects produced in 4H-SiC epilayers by proton and alpha particle irradiation

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F13%3A00201109" target="_blank" >RIV/68407700:21230/13:00201109 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.661" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.661</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.661" target="_blank" >10.4028/www.scientific.net/MSF.740-742.661</a>

Result language
angličtina
Original language name
Radiation defects produced in 4H-SiC epilayers by proton and alpha particle irradiation
Original language description
Electronic properties of radiation damage produced in 4H-SiC epilayer by proton and alpha particle irradiation were investigated and compared. 4H-SiC epilayers, which formed the low doped n-base of Schottky barrier power diodes, were irradiated to identical depth with 550 keV protons and 1.9 MeV alphas. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurements.
Czech name
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Czech description
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Project
<a href="/en/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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