Lifetime Control in SiC PiN Diodes Using Radiation Defects

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F17%3A00311286" target="_blank" >RIV/68407700:21230/17:00311286 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.897.463" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/MSF.897.463</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.897.463" target="_blank" >10.4028/www.scientific.net/MSF.897.463</a>

Result language
angličtina
Original language name
Lifetime Control in SiC PiN Diodes Using Radiation Defects
Original language description
Application of radiation defects for lifetime control in contemporary SiC PiN diodes was investigated using the calibrated device simulator ATLAS from Silvaco, Inc. Recombination models accounting for the effect of deep levels introduced by the irradiation were set according to experimental results obtained by C-V and DLTS measurements performed on low-doped n-type SiC epilayers irradiated with 4.5 MeV electrons and 670 keV protons. Global (4.5 MeV electron irradiation) and local (700 keV proton irradiation) lifetime reduction was then applied on the 2A/10kV SiC PiN diode and the ON-state and reverse recovery characteristics were simulated and compared. Results show that the proton irradiation can substantially improve the trade-off between the diode ON-state and turn-OFF losses. Compared to the electron irradiation, the local lifetime killing by protons allows achieving better trade-off and softer recovery curves.
Czech name
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Czech description
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Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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