Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00322920" target="_blank" >RIV/68407700:21230/18:00322920 - isvavai.cz</a>
Result on the web
<a href="https://ieeexplore.ieee.org/document/8452157/" target="_blank" >https://ieeexplore.ieee.org/document/8452157/</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/TED.2018.2866763" target="_blank" >10.1109/TED.2018.2866763</a>

Result language
angličtina
Original language name
Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation
Original language description
Local lifetime reduction by proton irradiation was used to optimize static and dynamic parameters of a 10 kV SiC p-i-n diode. Carrier lifetime was reduced locally at the anode side by irradiation with 800 keV protons at fluences up to 1e11 cm-2. Results show that proton irradiation followed by annealing at 370ºC can be used for local and controllable reduction of carrier lifetime in SiC devices. The dominant recombination center is the Z1/2 defect, whose distribution can be set by irradiation energy and fluence. Proton irradiation substantially improves diode turn OFF while its effect on the forward voltage drop and leakage is not so harmful. Comparison of the technology curve for the unirradiated and proton irradiated p-i-n diode then clearly show that proton irradiation provides a superior trade-off between the static and dynamic losses.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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