Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F21%3A00350570" target="_blank" >RIV/68407700:21230/21:00350570 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1002/pssa.202100218" target="_blank" >https://doi.org/10.1002/pssa.202100218</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssa.202100218" target="_blank" >10.1002/pssa.202100218</a>
Alternative languages
Result language
angličtina
Original language name
Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices
Original language description
The effect of radiation damage on the minority carrier lifetime in the 4 H-SiC epilayers forming the n-base of the power p-i-n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and local lifetime reduction. Deep-level transient spectroscopy in combination with open-circuit voltage decay measurement shows that the carrier lifetime is reduced by increased carrier recombination on Z(1)/Z(2), EH3, and possibly RD4 levels. The lifetime degrades swiftly and the ON-state carrier modulation capability of high-voltage devices can be easily lost already at very low fluences. The results further show that the proton irradiation provides an excellent tool for local lifetime tailoring. The carrier lifetime can be easily set by proton fluence and localized by proton energy. The proper local lifetime reduction speeds up diode recovery without an undesirable increase in the forward voltage drop. However, attention must be taken to properly locate the damage maximum so as not to increase device leakage.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
ISSN
1862-6300
e-ISSN
1862-6319
Volume of the periodical
218
Issue of the periodical within the volume
23
Country of publishing house
DE - GERMANY
Number of pages
7
Pages from-to
1-7
UT code for WoS article
000665848600001
EID of the result in the Scopus database
2-s2.0-85108782985