Displacement damage and total ionisation dose effects on 4H-SiC power devices

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F19%3A00335095" target="_blank" >RIV/68407700:21230/19:00335095 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1049/iet-pel.2019.0049" target="_blank" >https://doi.org/10.1049/iet-pel.2019.0049</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1049/iet-pel.2019.0049" target="_blank" >10.1049/iet-pel.2019.0049</a>

Result language

angličtina

Original language name

Displacement damage and total ionisation dose effects on 4H-SiC power devices

Original language description

A comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by high-energy particles (protons, alphas, electrons and neutrons). The influence of radiation on device characteristics was determined, the introduced radiation defects were identified, and the main degradation mechanisms were established. Results show that radiation leads to the creation of acceptor traps in the lightly doped drift regions of irradiated devices. Devices then degrade due to the removal of the carriers and the decrease in carrier mobility and lifetime. For unipolar devices, the gradual increase of the forward voltage is typical while the blocking characteristics remain nearly unchanged. In bipolar devices, high introduction rates of defects cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation leading to a sharp increase of the forward voltage drop. The irradiation also shifts the threshold voltage of power switches. That is critical, namely for metal–oxide–semiconductor field-effect transistors. According to the authors’ study, the junction barrier Schottky diode and junction field-effect transistor (JFET) can be considered the most radiation-resistant SiC power devices.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

20201 - Electrical and electronic engineering

Project

—

Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

IET Power Electronics

ISSN

1755-4535

e-ISSN

1755-4543

Volume of the periodical

12

Issue of the periodical within the volume

15

Country of publishing house

GB - UNITED KINGDOM

Number of pages

9

Pages from-to

3910-3918

UT code for WoS article

000500187900008

EID of the result in the Scopus database

2-s2.0-85075818971