Total Irradiation Dose Effects on 4H-SiC Power Devices

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00322919" target="_blank" >RIV/68407700:21230/18:00322919 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Total Irradiation Dose Effects on 4H-SiC Power Devices
Original language description
The effect of neutron, electron and proton irradiation on electrical characteristics of different SiC power devices (JBS and PiN diodes, JFETs and MOSFETs) was investigated. DLTS investigation showed that above mentioned projectiles introduce similar deep acceptor levels (electron traps) in the SiC bandgap which compensate shallow donors, decrease carrier mobility and lifetime. The key degradation effect occurring in unipolar devices is the increase of the ON-state resistance which is caused by the compensation of the low doped n-type drift region and simultaneous lowering of electron mobility. In bipolar devices, high introduction rates of lifetime killing defects (the Z1/Z2 centers) cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation in the ON state leading to a sharp increase of the forward voltage drop. In the case of SiC power switches (JFET, MOSFET), these effects are accompanied by the shift of the threshold voltage. This effect is critical for MOSFETs since they contain the charge sensitive oxide layer. According to our study, the JBS diode and JFET can be considered the most radiation resistant devices.
Czech name
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Czech description
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Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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