Smoothing Gate Capacitance Models for CMOS Radio Frequency and Microwave Integrated Circuits CAD
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F02%3A03089420" target="_blank" >RIV/68407700:21230/02:03089420 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Smoothing Gate Capacitance Models for CMOS Radio Frequency and Microwave Integrated Circuits CAD
Original language description
Convergence problems for both voltage- and charge- controlled models of MOSFET gate capacitances are often a limiting factor of CAD tools. In paper, an idea of exponential smoothing of model discontinuities is proposed. The method is demonstrated by smoothing the discontinuity of Meyer's model at zero drain-source voltage. The updated model is tested on flip-flop circuit by an advanced algorithm.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F01%2F0432" target="_blank" >GA102/01/0432: Symbolic, semisymbolic and numerical methods of analysis, design and optimization of electrical circuits</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
IMS 2002 - International Microwave Symposium Digest
ISBN
0-7803-7239-5
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
605-608
Publisher name
IEEE
Place of publication
Piscataway
Event location
Seattle, Washington
Event date
Jun 2, 2002
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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