A Note on Trap Recombination in High Voltage Device Structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F03%3A03093421" target="_blank" >RIV/68407700:21230/03:03093421 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
A Note on Trap Recombination in High Voltage Device Structures
Original language description
The carrier lifetime is a very important parameter influencing all important characteristics of bipolar devices both discrete and integrated structures and carrier lifetime tailoring is an important part of power semiconductor device technology.
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
—
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
2003 IEEE Conference on Electron Devices and Solid-State Circuits
ISBN
0-7803-7749-4
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
309-312
Publisher name
Hong Kong University of Science and Technology
Place of publication
Hong Kong
Event location
Hong Kong
Event date
Dec 16, 2003
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—