A Note on Non-Uniform Recombination in Large Area Silicon Devices
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F09%3A00161241" target="_blank" >RIV/68407700:21230/09:00161241 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
A Note on Non-Uniform Recombination in Large Area Silicon Devices
Original language description
This paper discusses the influence of carrier lifetime inhomogeneous distribution on device characteristics. There is also a discussion of monitoring methods measuring carrier lifetime distribution both in starting single crystal material and in device structures after high-temperature processes and technological tools for structure homogenisation.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
The Physics of Semiconductor Devices: Technical Digest
ISBN
978-93-80043-60-9
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
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Publisher name
EXCEL INDIA PUBLISHERS
Place of publication
New Delhi-110067
Event location
New Delhi
Event date
Dec 15, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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