Monitoring of Carrier Lifetime Distribution in Technology of High Power Semiconductor Devices
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F06%3A00121721" target="_blank" >RIV/68407700:21230/06:00121721 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Monitoring of Carrier Lifetime Distribution in Technology of High Power Semiconductor Devices
Original language description
Non-uniform distribution of carrier lifetime over the area of power bipolar semiconductor devices results in a non-uniform distribution of on-state current density and switching loses. The paper describes a simple method for determining the carrier lifetime distribution in structures of power diodes.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ISPS 06 Proceedings
ISBN
80-01-03524-7
ISSN
1751-858X
e-ISSN
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Number of pages
6
Pages from-to
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Publisher name
Ediční středisko ČVUT
Place of publication
Praha
Event location
Praha
Event date
Aug 29, 2006
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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