OCVD Carrier Lifetime Measurements on Diode Structures with Non-Uniform Distribution of Recombination Centres
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F05%3A03108842" target="_blank" >RIV/68407700:21230/05:03108842 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
OCVD Carrier Lifetime Measurements on Diode Structures with Non-Uniform Distribution of Recombination Centres
Original language description
This paper investigates the problem of evaluating the lifetime of a carrier measured by the OCVD method on structures with a non-uniform carrier lifetime distribution, both axial and radial.
Czech name
Není k dispozici
Czech description
Není k dispozici
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
MICROTHERM 2005
ISBN
83-919353-9-6
ISSN
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e-ISSN
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Number of pages
8
Pages from-to
67-74
Publisher name
TU of Lodz
Place of publication
Lodž
Event location
Lodž
Event date
Jun 19, 2005
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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