Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00168049" target="_blank" >RIV/68407700:21230/10:00168049 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities
Original language description
The combination of emitter control with local lifetime tailoring by ion irradiation is experimentally analyzed in fast-recovery high power diodes. For this purpose, the carrier lifetime and excess carrier concentration profiles are measured and modeled within the low doped region of unirradiated and helium irradiated diodes under low current densities (<20 A/cm2).
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/LC06041" target="_blank" >LC06041: Preparation, modification and characterization of materials by energetic radiation.</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Electrochemical Society
ISSN
0013-4651
e-ISSN
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Volume of the periodical
157
Issue of the periodical within the volume
7
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
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UT code for WoS article
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EID of the result in the Scopus database
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