Free Carrier Absorption Investigations on Ion Irradiated Fast Recovery Diodes
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00168750" target="_blank" >RIV/68407700:21230/10:00168750 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Free Carrier Absorption Investigations on Ion Irradiated Fast Recovery Diodes
Original language description
The combination of emitter control with local lifetime tailoring is experimentally analysed in fast recovery high-power diodes. For this purpose, the carrier lifetime and excess carrier oncentration profiles are measured in both unirradiated and helium irradiated diodes. Employing the experimental lifetime profiles as input parameters, the SRH model parameters of device simulator are calibrated. Excellent agreement between the simulation and experimental results is obtained.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 22nd International Symposium on Power Semiconductor Devices & ICs
ISBN
978-4-88686-069-9
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
IEEE
Place of publication
Piscataway
Event location
Hiroshima
Event date
Jun 6, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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