Low-Temperature Formation of Deep Donor Layers by Proton Implantation: Effect of Hydrogen Plasma on Radiation Defect Removal
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00169970" target="_blank" >RIV/68407700:21230/10:00169970 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Low-Temperature Formation of Deep Donor Layers by Proton Implantation: Effect of Hydrogen Plasma on Radiation Defect Removal
Original language description
Hydrogen plasma efficiently removes majority of vacancy-related defects generated by proton implantation in both FZ and CZ substrates. Plasma and post-implantation annealing lead to appearing of new defects in Si band gap. These defects deteriorate electrical properties of thermal hydrogen-related shallow donors.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ISPS'10 PROCEEDINGS
ISBN
978-80-01-04602-9
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
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Publisher name
České vysoké učení technické v Praze
Place of publication
Praha
Event location
Praha
Event date
Sep 1, 2010
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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