3D Modeling of Assembly Influence on Packaged Transistors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00185041" target="_blank" >RIV/68407700:21230/11:00185041 - isvavai.cz</a>
Result on the web
<a href="http://www.arftg.org" target="_blank" >http://www.arftg.org</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
3D Modeling of Assembly Influence on Packaged Transistors
Original language description
Detailed analysis of 70-mil package and wafer scale package (WSP) based on the 3D field simulations is presented. It is shown that an assembly plays significant role in the package behavior. Simulation results confirm that the parameters of the package are varying with the change of the assembly-substrate parameters. The approach potentially makes possible to transfer parameters of a transistor corresponding to certain assembly to another assembly without necessity of new measurements. It is very promising in the design of amplifiers namely power amplifiers (PA).
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
78th ARFTG Microwave Measurement Conference Proceedings
ISBN
978-1-4673-0281-4
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
24-29
Publisher name
IEEE Microwave Theory and Techniques Society, US
Place of publication
Piscataway
Event location
Tempe
Event date
Nov 29, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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