Utilization fo Differential Evolutionary Optimization Algorithm for ESD MOSFET Model Fitting

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F12%3A00197298" target="_blank" >RIV/68407700:21230/12:00197298 - isvavai.cz</a>
Result on the web
<a href="http://www.imaps.cz/eds/" target="_blank" >http://www.imaps.cz/eds/</a>
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
Utilization fo Differential Evolutionary Optimization Algorithm for ESD MOSFET Model Fitting
Original language description
The aim of this paper is to present the utilization of modern optimization algorithm called Differential Evolution to automatically fit the measured data from test chip to the appropriate electrostatic discharge (ESD) model without the need of manual model-parameters tuning. In contrast with proposed method this traditional approach can be very time- and resource-consuming. Results of fitting the technology-optimized macro-model of NMOST to the simple piece-wise linear model of MOSFET snapback I-V characteristic will be presented.
Czech name
—
Czech description
—

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
S - Specificky vyzkum na vysokych skolach

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of Electronic Devices and Systems EDS 2012
ISBN
978-80-214-4539-0
ISSN
—
e-ISSN
—
Number of pages
6
Pages from-to
33-38
Publisher name
VUT v Brně, FEKT
Place of publication
Brno
Event location
Brno
Event date
Jun 28, 2012
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
—

Similar results(10)