Hydrogen silsesquioxane as a gate dielectric layer for SiC graphene FET

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F12%3A00197903" target="_blank" >RIV/68407700:21230/12:00197903 - isvavai.cz</a>

Alternative codes found

RIV/60461373:22310/12:43894452

Result on the web

<a href="http://www.elu.sav.sk/asdam/" target="_blank" >http://www.elu.sav.sk/asdam/</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Hydrogen silsesquioxane as a gate dielectric layer for SiC graphene FET

Original language description

Graphene can be prepared by annealing of SiC wafer. That allows large scale patterning by standard UV photolithography. Unfortunately SiC substrate does not allow back-gating in contrast to graphene on silicon substrate (with thin silicon dioxide layer).The major challenge is to find suitable dielectric layer that can be used for electrostatic gating without significant influence on carrier mobility or another properties of graphene. We examined electrical behavior of electron exposed hydrogen silsesquioxane (HSQ) layer used as dielectric layer of top-gated SiC graphene.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>

Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

ASDAM 2012

ISBN

978-1-4673-1195-3

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

251-254

Publisher name

STU v Bratislave, FEI

Place of publication

Bratislava

Event location

Smolenice Castle

Event date

Nov 11, 2012

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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