Large-Area 6.5 kV Fast Recovery Diode with Cathode Shorts for Very High Current Handling Capability

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F13%3A00205455" target="_blank" >RIV/68407700:21230/13:00205455 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Large-Area 6.5 kV Fast Recovery Diode with Cathode Shorts for Very High Current Handling Capability
Original language description
Large-area silicon P-i-N diodes (VRRM = 6.5 kV, IFAV = 1.5 - 2 kA, A > 53 cm2) for the applica-tions employing high power IGCTs were produced with cathode shorts. The aim is to con-serve the softness under reverse recovery, while using thinner silicon for a better technology curve between the static and dynamic losses compared to existing designs. Since the new design can reduce around 10% of the original device thickness while achieving the same softness, fast recovery diodes with increased power handling capability can be achieved for the demanding applications with 4 kV DC link. With a properly optimized design of the cath-ode shorts, one can improve the technology curve even for the same silicon thickness. The potential way for the loss minimisation is presented.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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