Cathode Short Technology for High-Voltage Large Area Fast Recovery Silicon Diodes: The Impact of Operating Temperature

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00219673" target="_blank" >RIV/68407700:21230/14:00219673 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Cathode Short Technology for High-Voltage Large Area Fast Recovery Silicon Diodes: The Impact of Operating Temperature
Original language description
Large area 4.5 and 6.5 kV fast recovery diodes with cathode shorts for improved softness under reverse recovery are studied in the circuits with IGCTs at T = 20 140 °C. A different temperature behavior of the softness of the two diode concepts is shown.For an equivalent diode thickness, the shorted FRDs are always softer than the classical ones in the whole temperature range. For the next generation diode technology with an improved technology curves the thinner diodes are needed with equivalent softness. Reduced softness of the shorted diodes at lower temperatures represents a serious obstacle in achieving this goal when circuits with stray inductance >200 nH are used. Exclusion of any irradiation from the shorted area is shown to help with removal of this this obstacle.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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