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Fast Recovery High-Power P-i-N Diode with Heavily Shorted Cathode for Enhanced Ruggedness in the Circuits with IGCTs

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00301898" target="_blank" >RIV/68407700:21230/16:00301898 - isvavai.cz</a>

  • Result on the web

    <a href="http://80.ieeexplore.ieee.org.dialog.cvut.cz/document/7520838/" target="_blank" >http://80.ieeexplore.ieee.org.dialog.cvut.cz/document/7520838/</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1109/ISPSD.2016.7520838" target="_blank" >10.1109/ISPSD.2016.7520838</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Fast Recovery High-Power P-i-N Diode with Heavily Shorted Cathode for Enhanced Ruggedness in the Circuits with IGCTs

  • Original language description

    We experimentally demonstrate that soft recovery of large area 4.5 kV Fast Recovery Diode (FRD) processed at thinner silicon can be achieved down to low temperature, if more than 50% cathode area is covered by shorts. The heavily shorted diode outperforms the classical one in the softness at DC link voltages well above the standard VDC = 2.8 kV even with wafer thickness reduced by 15%. Parameter optimization results in the device with improved technology curve at T = 25 °C, comparable technology curve at T = 140 °C and unbeatable softness up to VDC = 3.6 kV. Excellent switching ruggedness is shown for the worst case of high electron irradiation dose (the lowest Erec), T = 25 °C and stray inductance of LS= 600 nH.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

  • ISBN

    978-1-4673-8770-5

  • ISSN

    1946-0201

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

    303-306

  • Publisher name

    IEEE

  • Place of publication

    Piscataway, NJ

  • Event location

    Praha

  • Event date

    Jun 12, 2016

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000392269000075