Fast Recovery High-Power P-i-N Diode with Heavily Shorted Cathode for Enhanced Ruggedness in the Circuits with IGCTs
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00301898" target="_blank" >RIV/68407700:21230/16:00301898 - isvavai.cz</a>
Result on the web
<a href="http://80.ieeexplore.ieee.org.dialog.cvut.cz/document/7520838/" target="_blank" >http://80.ieeexplore.ieee.org.dialog.cvut.cz/document/7520838/</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ISPSD.2016.7520838" target="_blank" >10.1109/ISPSD.2016.7520838</a>
Alternative languages
Result language
angličtina
Original language name
Fast Recovery High-Power P-i-N Diode with Heavily Shorted Cathode for Enhanced Ruggedness in the Circuits with IGCTs
Original language description
We experimentally demonstrate that soft recovery of large area 4.5 kV Fast Recovery Diode (FRD) processed at thinner silicon can be achieved down to low temperature, if more than 50% cathode area is covered by shorts. The heavily shorted diode outperforms the classical one in the softness at DC link voltages well above the standard VDC = 2.8 kV even with wafer thickness reduced by 15%. Parameter optimization results in the device with improved technology curve at T = 25 °C, comparable technology curve at T = 140 °C and unbeatable softness up to VDC = 3.6 kV. Excellent switching ruggedness is shown for the worst case of high electron irradiation dose (the lowest Erec), T = 25 °C and stray inductance of LS= 600 nH.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
ISBN
978-1-4673-8770-5
ISSN
1946-0201
e-ISSN
—
Number of pages
4
Pages from-to
303-306
Publisher name
IEEE
Place of publication
Piscataway, NJ
Event location
Praha
Event date
Jun 12, 2016
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000392269000075