The Effectof Light Ion Irradiation on 4H-SiC MPS Power Diode Characteristics: Experiment and Simulation

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00229446" target="_blank" >RIV/68407700:21230/15:00229446 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/TNS.2015.2395712" target="_blank" >http://dx.doi.org/10.1109/TNS.2015.2395712</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/TNS.2015.2395712" target="_blank" >10.1109/TNS.2015.2395712</a>

Result language
angličtina
Original language name
The Effectof Light Ion Irradiation on 4H-SiC MPS Power Diode Characteristics: Experiment and Simulation
Original language description
In this article, the effect of local radiation damage on the electrical characteristics of 1700 V 4H-SiC Merged-Pin Schottky (MPS) diode have been investigated. Radiation defects introduced by irradiation with 670 keV protons were placed into the low?doped n-type epi?layer and their influence on diode characteristics were characterized by capacitance DLTS, C-V profiling and I-V measurements. Simulation model laccounting for the effect of proton irradiation was developed, calibrated and used for analysisof underlying effects and temperature dependencies.
Czech name
—
Czech description
—

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—

Project
<a href="/en/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)