Effect of Ion Irradiation on Electrical Characteristics of 1200V SiC Schottky Diodes

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F12%3A00199063" target="_blank" >RIV/68407700:21230/12:00199063 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Effect of Ion Irradiation on Electrical Characteristics of 1200V SiC Schottky Diodes
Original language description
The effect of ion irradiation on electrical characteristics of SiC Schottky barrier power diodes was investigated. Diodes were irradiated from the anode side with 550 keV protons or 1.9 MeV alphas to place radiation defect maximum into the low doped epitaxial layer which formed the N-base of the diode. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and their influence on diode static and dynamic characteristics was evaluated. Results show that low fluences ofboth proton and alpha particle irradiation have a negligible effect on dynamic and blocking characteristics of SiC power diodes. However, in contrast with silicon devices, the ON-state resistance of SiC diodes increases significantly already at very lowfluences. This negative effect is given by high introduction rates of radiation defects in SiC due to the suppressed annihilation of primary damage.
Czech name
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Czech description
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Project
<a href="/en/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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