Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00229932" target="_blank" >RIV/68407700:21230/15:00229932 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/TED.2015.2421503" target="_blank" >http://dx.doi.org/10.1109/TED.2015.2421503</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/TED.2015.2421503" target="_blank" >10.1109/TED.2015.2421503</a>
Alternative languages
Result language
angličtina
Original language name
Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode
Original language description
The ON-state characteristics of a 1.7-kV 4H–SiC junction barrier Schottky diode were studied after 4.5-MeV electron irradiation. Irradiation doses were chosen to cause a light, strong, and full doping compensation of an epitaxial layer. The diodes were characterized using Deep Level Transient Spectroscopy, C–V(T), and I–V measurements without postirradiation annealing. The calibration of model parameters of a device simulator, which reflects the unique defect structure caused by the electron irradiation, was verified up to 2000 kGy. The quantitative agreement between simulation and measurement requires: 1) the Shockley–Read–Hall model with at least two deep levels on the contrary to ion irradiation and 2) a new model for enhanced mobility degradation due to radiation defects. The diode performance at high electron fluences is shown to be limited by the doping compensation at the epitaxial layer.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
<a href="/en/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IEEE Transactions on Electron Devices
ISSN
0018-9383
e-ISSN
1557-9646
Volume of the periodical
62
Issue of the periodical within the volume
6
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
1964-1969
UT code for WoS article
000355405800042
EID of the result in the Scopus database
2-s2.0-84970913580