Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00230081" target="_blank" >RIV/68407700:21230/15:00230081 - isvavai.cz</a>
Result on the web
<a href="http://spie.org/Publications/Proceedings/Paper/10.1117/12.2179041" target="_blank" >http://spie.org/Publications/Proceedings/Paper/10.1117/12.2179041</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2179041" target="_blank" >10.1117/12.2179041</a>
Alternative languages
Result language
angličtina
Original language name
Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions
Original language description
AlGaN/GaN based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been presented as sensing devices for mechanical or chemical sensors operating in extreme conditions. We demonstrated that a 4H-SiC 80?m thick diaphragms can be fabricated much faster with laser ablation than by electrochemical, photochemical or reactive ion etching (RIE). We were able to verify the feasibility of this process by fabrication of micromechanical membrane structures also in bulk 3C-SiC, borosilicate glass, sapphire and Al2O3 ceramic substrates by femtosecond laser (520nm) ablation. On a 350?m thick 4H-SiC substrate we produced an array of 275?m deep and 1000?m to 3000?m of diameter blind holes without damaging the 2?m AlN layer at the back side. In addition we investigated ferroelectric thin films as they can be deposited and micro-patterned by a direct UV-lithography method after the ablation process for a specific membrane design.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems
ISBN
978-1-62841-639-8
ISSN
0277-786X
e-ISSN
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Number of pages
7
Pages from-to
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Publisher name
SPIE
Place of publication
Bellingham
Event location
Barcelona
Event date
May 4, 2015
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000357978500064