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Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00230081" target="_blank" >RIV/68407700:21230/15:00230081 - isvavai.cz</a>

  • Result on the web

    <a href="http://spie.org/Publications/Proceedings/Paper/10.1117/12.2179041" target="_blank" >http://spie.org/Publications/Proceedings/Paper/10.1117/12.2179041</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1117/12.2179041" target="_blank" >10.1117/12.2179041</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions

  • Original language description

    AlGaN/GaN based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been presented as sensing devices for mechanical or chemical sensors operating in extreme conditions. We demonstrated that a 4H-SiC 80?m thick diaphragms can be fabricated much faster with laser ablation than by electrochemical, photochemical or reactive ion etching (RIE). We were able to verify the feasibility of this process by fabrication of micromechanical membrane structures also in bulk 3C-SiC, borosilicate glass, sapphire and Al2O3 ceramic substrates by femtosecond laser (520nm) ablation. On a 350?m thick 4H-SiC substrate we produced an array of 275?m deep and 1000?m to 3000?m of diameter blind holes without damaging the 2?m AlN layer at the back side. In addition we investigated ferroelectric thin films as they can be deposited and micro-patterned by a direct UV-lithography method after the ablation process for a specific membrane design.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems

  • ISBN

    978-1-62841-639-8

  • ISSN

    0277-786X

  • e-ISSN

  • Number of pages

    7

  • Pages from-to

  • Publisher name

    SPIE

  • Place of publication

    Bellingham

  • Event location

    Barcelona

  • Event date

    May 4, 2015

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000357978500064