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MICRO STRUCTURING OF BULK SIC SUBSTRATES BY FEMTOSECOND LASER ABLATION

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00305331" target="_blank" >RIV/68407700:21230/16:00305331 - isvavai.cz</a>

  • Result on the web

    <a href="http://kf.elf.stuba.sk/~apcom/apcom16/" target="_blank" >http://kf.elf.stuba.sk/~apcom/apcom16/</a>

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    MICRO STRUCTURING OF BULK SIC SUBSTRATES BY FEMTOSECOND LASER ABLATION

  • Original language description

    SiC is a material basis for pressure and strain sensors used in harsh thermal environment conditions. For such sensor devices, piezoelectric III-N compounds, especially gallium nitride (GaN)-related heterostructures on appropriate tailored SiC diaphragms are often used. We demonstrated that diaphragms can be fabricated faster with laser ablation than by reactive ion etching. However, laser ablation frequently causes pinholes in SiC membranes provoking increased risk to damage the III-N heterostructure by the fabrication process. Our experiments confirmed that pinhole defects in the ablated membranes are initiated by ripple structures related to the polarization of the laser. We developed an ablation technique inhibiting the formation of pin holes caused by laser induced periodic surface structures (LIPSS). In addition we tested the hypothesis that LIPSS in SiC act like slot waveguides performing a numerical study of light propagation in LIPSS. The results showed that laser intensity is enhanced inside LIPSS which supports the experimental ablation findings in the formation of pinholes and led us to effective countermeasures.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proceedings of the 22 th International conference on APPLIED PHYSICS OF CONDENSED MATTER

  • ISBN

    978-80-227-4373-0

  • ISSN

  • e-ISSN

  • Number of pages

    5

  • Pages from-to

  • Publisher name

    FEI, Slovak University of Technology

  • Place of publication

    Bratislava

  • Event location

    Strbske Pleso

  • Event date

    Jun 22, 2016

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article